TEM characterization of defects in LEC-grown GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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2. On the absence of decoration As precipitates at dislocations in Te-doped GaAs;Journal of Physics: Condensed Matter;2000-11-21
3. Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAs;Materials Science and Engineering: B;1998-08
4. Defect processes causing free carrier variations around dislocations in n-type doped GaAs;Materials Science and Engineering: B;1997-02
5. Synchrotron topographic study of defects in liquid-encapsulated Czochralski-grown semi-insulating gallium arsenide wafers;Journal of Crystal Growth;1993-09
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