A model for Be-related photo-absorption in compensated GaN:Be substrates-Reference-Cited by-同舟云学术

A model for Be-related photo-absorption in compensated GaN:Be substrates

Published:2016-09-21 Issue:11 Volume:120 Page:115701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Willoughby W. R.¹,Zvanut M. E.¹,Dashdorj J.¹,Bockowski M.²

Affiliation:

1. Department of Physics, University of Alabama at Birmingham, Birmingham, Alabama 35294, USA

2. Institute of High Pressure Physics PAS, Sokolowska, 29/37, 01-142 Warsaw, Poland

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/jap/120/11/1.4962460.pdf?itemId=/content/aip/journal/jap/120/11/10.1063/1.4962460&mimeType=pdf&containerItemId=content/aip/journal/jap

Reference24 articles.

1. Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

2. First-principles studies of beryllium doping of GaN

3. V. Fiorentini , F. Bernardini , A. Bosin , and D. Vanderbilt , in Proceedings of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann ( World Scientific, Singapore, 1996), p. 2877.

4. Role of hydrogen in doping of GaN

5. Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Origin of the Yellow Luminescence Band in Be-Doped Bulk GaN;Solids;2024-01-04

2. Review of defect physics and doping control in wide-band-gap semiconductors;Chinese Science Bulletin;2022-11-01

3. Direct evidence of Be as an amphoteric dopant in GaN;Physical Review B;2022-05-27

4. Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping;Advanced Materials;2021-09-02

5. Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors;Physical Review Letters;2021-01-13