Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy

Published:1998-10-01 Issue:10 Volume:13 Page:1130-1133
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Sánchez F J,Calle F,Sánchez-García M A,Calleja E,Muñoz E,Molloy C H,Somerford D J,Serrano J J,Blanco J M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers

2. GaN, AlN, and InN: A review

3. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers

4. p‐type zinc‐blende GaN on GaAs substrates

5. Acceptor binding energy in GaN and related alloys

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of acceptors in GaN;Physical Review B;2024-07-15

2. Dual nature of the BeGa acceptor in GaN: Evidence from photoluminescence;Physical Review B;2023-08-15

3. Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition;physica status solidi (b);2022-12-13

4. Thermal annealing of GaN implanted with Be;Journal of Applied Physics;2022-03-28

5. Passivation of the beryllium acceptor in GaN and a possible route for p-type doping;Applied Physics Letters;2021-04-05

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