Passivation of the beryllium acceptor in GaN and a possible route for p-type doping
Author:
Affiliation:
1. Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23220, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0039388
Reference35 articles.
1. HYDROGEN IN SEMICONDUCTORS
2. Hydrogen in Crystalline Semiconductors
3. The Blue Laser Diode
4. Hole Compensation Mechanism of P-Type GaN Films
5. AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment
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