Self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3309954
Reference30 articles.
1. Development of Bottom-Emitting 1300-nm Vertical-Cavity Surface-Emitting Lasers
2. High-power InGaAs/GaAs 1.3 [micro sign]m VCSELs based on novel electrical confinement scheme
3. InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers
4. 1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
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2. Numerical investigation on self-heating effect in 1.3 µm quantum dot photonic crystal microstructure VCSELs;The European Physical Journal Plus;2022-04
3. The role of wetting layer and QD-layers on the performance of 1.3 µm QD-VCSEL;Applied Physics B;2022-03-28
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