InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20093380?crawler=true&mimetype=application/pdf
Reference11 articles.
1. High speed 1.3 [micro sign]m VCSELs for 12.5 Gbit/s optical interconnects
2. Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70 $^{\circ}$C
3. InP-based 1.3-1.6-/spl mu/m VCSELs with selectively etched tunnel-junction apertures on a wavelength flexible platform
4. Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs–InP DBR Grown by MOCVD
5. Efficient CW lasing and high-speed Modulation of 1.3-μm AlGaInAs VCSELs with good high temperature lasing performance
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1. Long-Wavelength VCSELs: Status and Prospects;Photonics;2023-03-03
2. Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers;Lecture Notes in Electrical Engineering;2021-09-03
3. Interband mid-infrared lasers;Mid-infrared Optoelectronics;2020
4. Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements;Journal of Applied Physics;2012-08
5. Selective lateral etching of InAs/GaSb tunnel junctions for mid-infrared photonics;Semiconductor Science and Technology;2012-06-27
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