Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4744985
Reference22 articles.
1. InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers
2. Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP-based quantum well lasers
3. Low-threshold high-T/sub 0/ 1.3-/spl mu/m InAs quantum-dot lasers due to p-type modulation doping of the active region
4. Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers
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