Selective lateral etching of InAs/GaSb tunnel junctions for mid-infrared photonics
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Tunnel junctions for ohmic intra-device contacts on GaSb-substrates
2. n-InAsSb∕p-GaSb tunnel junctions with extremely low resistivity
3. Ultra-low resistive GaSb/InAs tunnel junctions
4. Trace gas detection with antimonide-based quantum-well diode lasers
5. Sb-based monolithic VCSEL operating near 2.2 [micro sign]m at room temperature
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1. Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells;Solar Energy Materials and Solar Cells;2021-01
2. Interband mid-infrared lasers;Mid-infrared Optoelectronics;2020
3. Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures;Nanotechnology;2016-09-08
4. New wet etching solution molar ratio for processing T2SLs InAs/GaSb nBn MWIR infrared detectors grown on GaSb substrates;Materials Science in Semiconductor Processing;2016-01
5. InAs/GaSb Type-II Superlattice Detectors;Advances in Electronics;2014-04-10
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