Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference52 articles.
1. C. Tong, X. Dawei, S.F. Yoon, Y. Ding, W.J. Fan, Temperature characteristics of 1.3-µm p-doped InAs–GaAs quantum-dot vertical-cavity surface-emitting lasers. IEEE J. Sel. Top. Quantum Electron. 15(3), 743–748 (2009)
2. C.W. Wilmsen, H. Temkin, L.A. Coldren, Vertical-cavity surface-emitting lasers: design, fabrication, characterization, and applications, vol. 24 (Cambridge University Press, 2001)
3. K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, H. Ishikawa, 1.3-µm CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots. IEEE J. Quantum Electron. 36(4), 472–478 (2000)
4. R.P. Sarzala, Modeling of the threshold operation of 1.3-µm GaAs-based oxide-confined (InGa) As-GaAs quantum-dot vertical-cavity surface-emitting lasers. IEEE J. Quantum Electron. 40(6), 629–639 (2004)
5. N. Ledentsov, Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts. IEEE J. Sel. Top. Quantum Electron. 8(5), 1015–1024 (2002)
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