Nonexponential deep level transient spectroscopy analysis of moderately doped bulkn‐GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351125
Reference8 articles.
1. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
2. Deep-level transient spectroscopy (DLTS) analysis of defect levels in semiconductor alloys
3. Origin of anE3-like defect in GaAs andGaAs1−xSbxalloys
4. Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys
5. Photo-induced changes in the bulk density of gap states in hydrogenated amorphous silicon associated with the Staebler-Wronski effect
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3. Broadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics;Journal of Applied Physics;2009-05-15
4. Simple Diophantine test for the validity of conventional deep level transient spectroscopy;Applied Physics Letters;1994-03-28
5. Comment on ‘‘Inverse problem for the nonexponential deep level transient spectroscopy analysis in semiconductor materials with strong disorder: Theoretical and computational aspects’’ [J. Appl. Phys.74, 291 (1993)];Journal of Applied Physics;1994-01-15
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