Deep-level transient spectroscopy (DLTS) analysis of defect levels in semiconductor alloys
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/3/i=12/a=005/pdf
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1. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
2. Raman Scattering in Alloy Semiconductors: "Spatial Correlation" Model
3. Direct Evidence for Random-Alloy Splitting of Cu Levels inGaAs1−xPx
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