DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell-Reference-Cited by-同舟云学术

DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell

Published:2014-09-01 Issue:5 Volume:65 Page:271-276
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Kósa Arád¹,Stuchlíková L’ubica²,Dawidowski Wojciech³,Jakuš Juraj²,Sciana Beata³,Radziewicz Damian³,Pucicki Damian³,Harmatha Ladislav²,Kováč Jaroslav²,Tłaczala Marek³

Affiliation:

1. Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia,

2. Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

3. Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Abstract

Abstract In this paper authors present the results of identification of emission and capture processes in tandem solar cell structures based on quaternary InGaAsN semiconductor alloys by DLTFS (Deep Level Transient Fourier Spectroscopy) and by ana- lytical evaluation processes. The energies of five trap levels ET1=0.77 eV, ET2=0.47 eV, ET3=0.64 eV, HT1=0.62 eV and HT2=0.53 eV were identified with reliable accuracy. These values were obtained by available analytical procedures, verified by simulations and confirmed by reference structures with basic layer types and compared with possible reference trap data. Native structural defects in GaAs were stated as the origin of these deep energy levels

Publisher

Walter de Gruyter GmbH

Link

https://www.sciendo.com/pdf/10.2478/jee-2014-0043

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