Terrace grading of SiGe for high-quality virtual substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1529308
Reference9 articles.
1. Defects in epitaxial multilayers
2. Line, point and surface defect morphology of graded, relaxed GeSi alloys on Si substrates
3. New Mechanism for Dislocation Blocking in Strained Layer Epitaxial Growth
4. Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
5. Influence of misfit dislocations on the surface morphology of Si1−xGex films
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1. Vertical alignment control of self-ordered multilayered Ge nanodots on SiGe;Japanese Journal of Applied Physics;2023-02-07
2. Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells;Physical Review B;2018-11-19
3. Design and epitaxial growth of quality-enhanced crack-free GaN films on AlN/Al heterostructures and their nucleation mechanism;CrystEngComm;2018
4. Ge growth on porous silicon: The effect of buffer porosity on the epilayer crystalline quality;Applied Physics Letters;2014-09-22
5. Strained Si and Ge Channels;Nanoscale CMOS;2013-03-05
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