Ge growth on porous silicon: The effect of buffer porosity on the epilayer crystalline quality
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4894863
Reference48 articles.
1. TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology
2. p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si
3. Ge-on-Si laser operating at room temperature
4. An electrically pumped germanium laser
5. Model for direct-transition gain in a Ge-on-Si laser
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