TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology-Reference-Cited by-同舟云学术

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TEM analysis of Ge-on-Si MOSFET structures with HfO2dielectric for high performance PMOS device technology

Published:2010-02-01 Issue: Volume:209 Page:012061
ISSN:1742-6596
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Norris D J,Walther T,Cullis A G,Myronov M,Dobbie A,Whall T,Parker E H C,Leadley D R,Jaeger B De,Lee W,Meuris M,Watling J,Asenov A

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/209/i=1/a=012061/pdf

Reference7 articles.

1. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

2. Electrical and reliability characterization of metal-gate/HfO2/Ge FET’s with Si passivation

3. Experimental and theoretical study of Ge surface passivation

4. Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

5. Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigations on Cylindrical Surrounding Double-gate (CSDG) Mosfet using AL_XGA_1-XAS/INP: PT with LA₂O₃Oxide Layer for Fabrication;Recent Patents on Nanotechnology;2024-06

2. Ge growth on porous silicon: The effect of buffer porosity on the epilayer crystalline quality;Applied Physics Letters;2014-09-22

3. Laser annealing of SiGe and Ge based devices;Microelectronic Engineering;2011-04

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