GeOx interfacial layer scavenging remotely induced by metal electrode in metal/HfO2/GeOx/Ge capacitors-Reference-Cited by-同舟云学术

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GeOx interfacial layer scavenging remotely induced by metal electrode in metal/HfO2/GeOx/Ge capacitors

Published:2016-07-11 Issue:2 Volume:109 Page:023108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Taehoon¹,Jung Yong Chan¹,Seong Sejong¹,Lee Sung Bo²^ORCID,Park In-Sung¹³,Ahn Jinho¹

Affiliation:

1. Department of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea

2. Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826, Korea

3. Institute of Nano Science and Technology, Hanyang University, Seoul 04763, Korea

Funder

National Research Foundation of Korea (NRF)

Ministry of Science, ICT and Future Planning (MSIP)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4958874

Reference23 articles.

1. Ge and III/V as Enabling Materials for Future CMOS Technologies

2. Device structures and carrier transport properties of advanced CMOS using high mobility channels

3. Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

4. An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge(111) and Ge(100) surfaces

5. Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al 2 O 3 Interface Induced by Titanium Layer;Advanced Materials Interfaces;2021-12-16

2. Enhanced resistive switching characteristics of HfOx insulator fabricated by atomic layer deposition and La(NO3)3·6H2O solution as catalytic oxidant;Journal of Vacuum Science & Technology A;2020-05

3. Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films;Materials Science in Semiconductor Processing;2018-12

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