Enhanced resistive switching characteristics of HfOx insulator fabricated by atomic layer deposition and La(NO3)3·6H2O solution as catalytic oxidant-Reference-Cited by-同舟云学术

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Enhanced resistive switching characteristics of HfOx insulator fabricated by atomic layer deposition and La(NO3)3·6H2O solution as catalytic oxidant

Published:2020-05 Issue:3 Volume:38 Page:032405
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Jung Yong Chan¹²,Park In-Sung³,Seong Sejong¹,Lee Taehoon¹,Kim Seon Yong¹,Ahn Jinho¹

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea

2. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080

3. Institute of Nano Science and Technology, Hanyang University, Seoul 04763, South Korea

Funder

National Research Foundation of Korea

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5134828

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants;Materials;2021-12-06

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