Precise measurement of electric potential, field, and charge density profiles across a biased GaAs p-n tunnel junction by in situ phase-shifting electron holography-Reference-Cited by-同舟云学术

Precise measurement of electric potential, field, and charge density profiles across a biased GaAs p-n tunnel junction by in situ phase-shifting electron holography

Published:2017-12-12 Issue:22 Volume:122 Page:225702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Anada Satoshi¹,Yamamoto Kazuo¹,Sasaki Hirokazu²,Shibata Naoya¹³,Hori Yujin²,Kinugawa Kouhei²,Imamura Akihiro²,Hirayama Tsukasa¹

Affiliation:

1. Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan

2. Advanced Technologies R&D Laboratories, Furukawa Electric Co. Ltd., 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan

3. Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference33 articles.

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3. The effects of degeneracy on doping efficiency for n−type implants in GaAs

4. Electron Holographic Observations of the Electrostatic Field Associated with Thin Reverse-Biasedp−nJunctions

5. Observation of electrostatic fields by electron holography: The case of reverse-biased p-n junctions

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