Low resistance Ti/Au contacts to amorphous gallium indium zinc oxides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3567796
Reference14 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Material characteristics and applications of transparent amorphous oxide semiconductors
3. Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material
4. Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes
5. The effect of annealing on amorphous indium gallium zinc oxide thin film transistors
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