High-Performance Oxide TFTs With Co-Sputtered Indium Tin Oxide and Indium-Gallium-Zinc Oxide at Source and Drain Contacts-Reference-Cited by-同舟云学术

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High-Performance Oxide TFTs With Co-Sputtered Indium Tin Oxide and Indium-Gallium-Zinc Oxide at Source and Drain Contacts

Published:2021-02 Issue:2 Volume:42 Page:168-171
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Choi Sung-Hwan^ORCID

Funder

Korea Institute of Industrial Technology as “Development of Core Technologies for a WorkingPartner Robot in the Manufacturing Field”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9337249/09309055.pdf?arnumber=9309055

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing;Advanced Functional Materials;2024-06-16

2. Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway;ACS Nano;2024-03-22

3. Reliability issues of amorphous oxide semiconductor-based thin film transistors;Journal of Materials Chemistry C;2024

4. Tunable synaptic behaviors of solution-processed InGaO films for artificial visual systems;Materials Horizons;2024

5. Comparative Study on the Effects of O₂ Flow Rate on As-Deposited Polycrystalline IAZO Films;ACS Applied Engineering Materials;2023-11-17

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