The effect of annealing on amorphous indium gallium zinc oxide thin film transistors-Reference-Cited by-同舟云学术

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The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

Published:2010-09 Issue:22 Volume:518 Page:6325-6329
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Bae Hyeon-seok,Kwon Jae-Hong,Chang Seongpil,Chung Myung-Ho,Oh Tae-Yeon,Park Jung-Ho,Lee Sang Yeol,Pak James Jungho,Ju Byeong-Kwon

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Transparent Electronics

2. Towards See-Through Displays: Fully Transparent Thin-Film Transistors Driving Transparent Organic Light-Emitting Diodes

3. Inorganic Semiconductors for Flexible Electronics

4. Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes

5. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mobility enhancement of tin oxide thin-film transistor by indium-doping;Vacuum;2024-03

2. High-Stability IWO Thin-Film Transistors Under Microwave Annealing for Low Thermal Budget Application;IEEE Transactions on Nanotechnology;2024

3. Preparation and electrical characteristics of Li–N co-doped InZnAlO thin film transistors by radio frequency magnetron sputtering;Vacuum;2022-11

4. Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors;Electronics;2022-09-28

5. Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors;Nanomaterials;2022-07-13

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