Electron spin resonance characterization and localization of a thermally generated donor inherent to the separation by implantation of oxygen process
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353300
Reference45 articles.
1. A comparison of buried oxide characteristics of single and multiple implant SIMOX and bond and etch back wafers
2. Silicon‐on‐insulator material formed by oxygen implantation and high‐temperature annealing: Carrier transport, oxygen activity, and interface properties
3. Low‐temperature properties and phototransport in silicon‐on‐insulator films synthesized by oxygen implantation
4. Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon‐on‐insulator films formed by oxygen implantation
5. Electrical properties of oxygen thermal donors in silicon films synthesized by oxygen implantation
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1. Structural studies of 20 keV oxygen-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-08
2. Optical and electron paramagnetic resonance study of light-emitting Si+ ion implanted silicon dioxide layers;Journal of Applied Physics;1999-01
3. Structural inhomogeneity and silicon enrichment of buried SiO2 layers formed by oxygen ion implantation in silicon;Journal of Applied Physics;1997-09
4. Buried SiO2 Films: Interfaces and Defects;Materials Science Forum;1997-01
5. Effect of Post-Oxidation on the Oxygen Deficiency of Buried Oxides;MRS Proceedings;1996
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