Structural studies of 20 keV oxygen-implanted silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference33 articles.
1. Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniques
2. Thin SiO2 films formed by oxygen ion implantation in silicon: Electron microscope investigations of the Si-SiO2 interface structures and their c-v characteristics
3. A study of silicon oxides prepared by oxygen implantation into silicon
4. Rutherford backscattering analysis of oxide layers formed by ion implantation into single-crystal silicon
5. Synthesis of silicon dioxide layers by high dose ion implantation
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