Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2829784
Reference25 articles.
1. Current status of selective area epitaxy by OMCVD
2. Growth of GaN and $\bf Al_{0.2}Ga_{0.8}N$ on Patterened Substrates via Organometallic Vapor Phase Epitaxy
3. Selective-area regrowth of GaN field emission tips
4. Selective growth of gallium nitride layers with a rectangular cross‐sectional shape and stimulated emission from the optical waveguides observed by photopumping
5. Selective MOVPE of GaN and AlxGa1−xN with smooth vertical facets
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