n+-GaN formed by Si implantation intop-GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1432118
Reference17 articles.
1. Photoluminescence of ion‐implanted GaN
2. Ion implantation doping and isolation of GaN
3. Electrical and structural analysis of high-dose Si implantation in GaN
4. Damage to epitaxial GaN layers by silicon implantation
5. Activation studies of low-dose Si implants in gallium nitride
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