Al0.3Ga0.7N/GaN heterostructure transistors with a regrown p-GaN gate formed with selective-area Si implantation as the regrowth mask-Reference-Cited by-同舟云学术

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Al0.3Ga0.7N/GaN heterostructure transistors with a regrown p-GaN gate formed with selective-area Si implantation as the regrowth mask

Published:2020-10 Issue: Volume:124 Page:114367
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Lee Ming-Lun,Chen Ching-Hua,Sheu Jinn-Kong

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

2. The 2018 GaN power electronics roadmap

3. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

4. Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process

5. The Effect of Incomplete Ionization on the Turn-Off Behavior of FS IGBTs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on a p-GaN HEMT with composite passivation and composite barrier layers;Semiconductor Science and Technology;2024-07-04

2. Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication;Electronics;2023-10-20

3. Direct visualization of highly resistive areas in GaN by means of low-voltage scanning electron microscopy;Materials Science in Semiconductor Processing;2022-02

4. NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTs;Applied Physics Reviews;2021-12

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