Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process
Author:
Affiliation:
1. Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4983013
Reference28 articles.
1. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
2. High performance and high reliability AlGaN/GaN HEMTs
3. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
4. AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation
5. High-performance E-mode AlGaN/GaN HEMTs
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