Observation of multiple precipitate layers in MeV Au++‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103103
Reference14 articles.
1. Buried dopant and defect layers for device structures with high-energy ion implantation
2. Latchup performance of retrograde and conventional n-well CMOS technologies
3. Epitaxial recrystallization and diffusion phenomena in amorphous silicon produced by MeV ion beams
4. Proximity gettering with mega‐electron‐volt carbon and oxygen implantations
5. Layer intermixing in 1 MeV implanted GaAs/AlGaAs superlattices
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1. Rutherford backscattering and electron microscopy study of annealing behavior of MeV implanted gold in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-07
2. Low current MeV Au2+ ion-induced amorphization in silicon: Rutherford backscattering spectrometry and transmission electron microscopy study;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-07
3. Projected Range, Range Straggling and Lateral Spread of 2.0 MeV Au+Ions Implanted into Si;Japanese Journal of Applied Physics;2002-02-15
4. Defect formation and annealing behavior of Si implanted by high-energy 166Er ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-03
5. 2.0-MeV Er+ implanted in silicon: depth distribution, damage profile and annealing behaviour;Applied Physics A Materials Science & Processing;2000-12
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