Rutherford backscattering and electron microscopy study of annealing behavior of MeV implanted gold in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference20 articles.
1. Buried dopant and defect layers for device structures with high-energy ion implantation
2. Latchup performance of retrograde and conventional n-well CMOS technologies
3. Ion-beam-induced crystallization and amorphization of silicon
4. Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si
5. Epitaxial recrystallization and diffusion phenomena in amorphous silicon produced by MeV ion beams
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1. Study of thermal recrystallisation in Si implanted by 0.4‐MeV heavy ions;Surface and Interface Analysis;2019-09-02
2. Formation of Au–Ge nanodots by Au− ion sputtering of Ge;Vacuum;2014-01
3. Ejection of Au and Si nanocrystals from Au implanted Si(100) by MeV heavy ion irradiation;Applied Surface Science;2013-10
4. Study of annealing induced redistribution of implanted Au in Si: Fluence dependence;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-12
5. Narrow band UV emission from direct bandgap Si nanoclusters embedded in bulk Si;Journal of Physics: Condensed Matter;2010-02-02
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