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Projected Range, Range Straggling and Lateral Spread of 2.0 MeV Au+Ions Implanted into Si

  • Published:2002-02-15 Issue:Part 1, No. 2A Volume:41 Page:918-921
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:en
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Ke-Ming,Chen Feng,Hu Hui,Zhang Jiang-Hua,Liu Xiang-Dong,Shen Ding-Yu,Narusawa Tadashi,Nagaki Masakane

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the Lateral Scattering of High‐Energy Heavy Ions Penetrating through Solids;physica status solidi (a);2023-01-04

2. Annealing of preexisting defects in silicon single crystals by ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-07

3. Strain distribution due to ion implantation revealed by extremely asymmetric x-ray diffraction;e-Journal of Surface Science and Nanotechnology;2006

4. Rutherford backscattering and electron microscopy study of annealing behavior of MeV implanted gold in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-07

5. Low current MeV Au2+ ion-induced amorphization in silicon: Rutherford backscattering spectrometry and transmission electron microscopy study;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-07
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