Impact of the strained SiGe source/drain on hot carrier reliability for 45nm p-type metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2904647
Reference15 articles.
1. Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's
2. Experimental evidence for nonlucky electron model effect in 0.15-μm NMOSFETs
3. IEEE 37th Annual International Reliability Physics Symposium;Li E.,1999
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1. Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel;Japanese Journal of Applied Physics;2020-04-06
2. Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface;Current Applied Physics;2014-11
3. Dependence of Nanocrystal Dimensionality on the Polymer Nanomorphology, Anisotropic Optical Absorption, and Carrier Transport in P3HT:TiO2 Bulk Heterojunctions;The Journal of Physical Chemistry C;2012-11-15
4. Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS;IEEE Transactions on Nuclear Science;2011-12
5. New Observations in LOD Effect of 45-nm P-MOSFETs With Strained SiGe Source/Drain and Dummy Gate;IEEE Transactions on Electron Devices;2009-08
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