Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab80a2/pdf
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1. Mosfet Scaling-the Driver of VLSI Technology
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1. Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks;ECS Journal of Solid State Science and Technology;2023-03-01
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