New Observations in LOD Effect of 45-nm P-MOSFETs With Strained SiGe Source/Drain and Dummy Gate-Reference-Cited by-同舟云学术

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New Observations in LOD Effect of 45-nm P-MOSFETs With Strained SiGe Source/Drain and Dummy Gate

Published:2009-08 Issue:8 Volume:56 Page:1618-1623
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cheng Chung-Yun,Fang Yean-Kuen,Hsieh Jang-Cheng,Yang Sheng-Jier,Sheu Yi-Ming,Hsia Harry

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5170230/05109722.pdf?arnumber=5109722

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact Study of Layout-Dependent Effects Toward FinFET Combinational Standard Cell Optimization;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-02

2. Mitigating the Length of Diffusion Effect by Back-End Design-Technology Cooptimization;IEEE Transactions on Electron Devices;2022-03

3. Material lattice orientation effect of local Si 1-x Ge x stressors on the width dependence of high-k metal gate PMOSFETs;Current Applied Physics;2018-08

4. Analysis of the Effect of TSV-Induced Stress on Devices Performance by Direct Strain and Electrical Measurements and FEA Simulations;IEEE Transactions on Device and Materials Reliability;2017-12

5. Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors;Thin Solid Films;2016-11

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