Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface-Reference-Cited by-同舟云学术

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Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface

Published:2014-11 Issue:11 Volume:14 Page:1557-1563
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Lee Chang Hwi^ORCID,Kim Geun-Myeong,Oh Young Jun,Chang K.J.

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning, Korea

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference52 articles.

1. See http://public.itrs.net/ for International Technology Roadmap for Semiconductors, Emerging Research Devices, ITRS 2012 edition.

2. Segregation and transport coefficients of impurities at the Si/SiO2interface

3. Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe

4. SIMS/ARXPS—A New Technique of Retained Dopant Dose and Profile Measurement of Ultralow-Energy Doping Processes

5. Point defects and dopant diffusion in silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of a Si0.95Ge0.05 epilayer cap on boron diffusion in silicon under inert and dry oxidizing ambient annealing;Materials Science in Semiconductor Processing;2016-06

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