On the mechanism and surface morphology of gallium arsenide laser‐assisted etching by chlorine at 193 nm
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.467632
Reference19 articles.
1. Thermodynamic calculations in CVD growth of GaAs compounds
2. Chemical etching of GaAs and InP by chlorine: The thermodynamically predicted dependence on Cl2 pressure and temperature
3. Kinetics of the reaction of gallium arsenide with molecular chlorine
4. A Molecular Beam Study of the Reaction of Molecular Chlorine with Gallium Arsenide
5. Observation of competing arsenic removal channels in the Cl2+GaAs reaction
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1. Laser-induced microstructuring of photonic materials: semiconductors;SPIE Proceedings;2000-11-06
2. Surface aligned photochemistry: Photodissociation of Cl2 and Cl2⋯Cl adsorbed on LiF(001);The Journal of Chemical Physics;2000-06
3. Highly-Selective Dry Etching of InAlAs Over InGaAs Assisted by ArF Excimer Laser with Cl2Gas;Japanese Journal of Applied Physics;1999-02-28
4. Pulsed-laser-induced etching of BrGaAs(110);Surface Science;1997-06
5. FUNDAMENTAL STUDIES OF HALOGEN REACTIONS WITH III-V SEMICONDUCTOR SURFACES;Annual Review of Physical Chemistry;1996-10
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