Structure of (√3×√3) R 30°‐B at the Si interface studied by grazing incidence x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102522
Reference13 articles.
1. Reflection high energy electron diffraction and Auger electron spectroscopic study on B/Si(111) surfaces
2. Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES study
3. Structure of boron enriched Si(111) surfaces investigated by Auger, LEED and scanning tunneling microscopy
4. Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional doping
5. Surface doping and stabilization of Si(111) with boron
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2. Growth of Twinned Epitaxial Layers on Si(111)$\sqrt{3}\times\sqrt{3}$-B Studied by Low-Energy Electron Microscopy;Japanese Journal of Applied Physics;2005-01-11
3. Structure determination of the(3×3)R30°boron phase on the Si(111) surface using photoelectron diffraction;Physical Review B;1999-05-15
4. Formation of twinned two-bilayer-high islands during initial stages of Si growth on Si(111)-B;Surface Science;1998-09
5. Interface Structure and Preferred Orientation of Ag/Si(111) Revealed by X-Ray Diffraction;Surface Review and Letters;1998-06
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