Formation of twinned two-bilayer-high islands during initial stages of Si growth on Si(111)-B
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference26 articles.
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5. Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
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2. Role of boron and (√3 × √3)-B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study;physica status solidi (a);2010-01-05
3. Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffraction;Surface Science;2009-02
4. An STM study of Ge heteroepitaxial growth on Si(111)√3×√3-B surfaces;Surface Science;2008-11
5. Formation of Si twinning-superlattice: First step towards Si polytype growth;Materials Science and Engineering: B;2006-10
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