Formation and morphology of step bunches during B-segregation on vicinal Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference30 articles.
1. Surface phase separation of vicinal Si(111)
2. Step-height-tripling transition on vicinal Si(111)
3. Temperature dependence of vicinal Si(111) surfaces
4. Low-energy electron-microscopy investigations of orientational phase separation on vicinal Si(111) surfaces
5. Kinetics and Thermodynamics of Surface Steps on Semiconductors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Space charge layer effects in silicon studied by in situ surface transport;Journal of Physics: Condensed Matter;2019-03-19
2. Regular step distribution of the bare Si(553) surface;Physical Review B;2015-06-15
3. Determination of the photoelectron reference plane in nanostructured surfaces;New Journal of Physics;2011-10-12
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