Step-height-tripling transition on vicinal Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.2991/fulltext
Reference33 articles.
1. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
2. Spontaneous growth of coherent tilted superlattice on vicinal (100) GaAs substrates
3. Pinning and roughening of one-dimensional models of interfaces and steps
4. Atomic structure of reconstructed group IV and III–V semiconductor surfaces
5. Long-range ledge-ledge interactions on Si(111) surfaces
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