Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy

Published:1995-09-15 Issue:Part 1, No. 9A Volume:34 Page:4593-4598
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kumagai Yoshinao,Mori Ryosuke,Ishimoto Kouichi,Park Kyung-ho,FumioHasegawa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Delta-doping of boron atoms by photoexcited chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-03

2. Growth of Twinned Epitaxial Layers on Si(111)$\sqrt{3}\times\sqrt{3}$-B Studied by Low-Energy Electron Microscopy;Japanese Journal of Applied Physics;2005-01-11

3. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties;Physics Reports;2003-05

4. Monitoring of Si Molecular-Beam Epitaxial Growth by an Ellipsometric Method;Japanese Journal of Applied Physics;2001-01-15

5. Formation of twinned two-bilayer-high islands during initial stages of Si growth on Si(111)-B;Surface Science;1998-09

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