Structure determination of the(3×3)R30°boron phase on the Si(111) surface using photoelectron diffraction-Reference-Cited by-同舟云学术

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Structure determination of the(3×3)R30°boron phase on the Si(111) surface using photoelectron diffraction

Published:1999-05-15 Issue:20 Volume:59 Page:13014-13019
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Baumgärtel P.,Paggel J. J.,Hasselblatt M.,Horn K.,Fernandez V.,Schaff O.,Weaver J. H.,Bradshaw A. M.,Woodruff D. P.,Rotenberg E.,Denlinger J.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.13014/fulltext

Reference47 articles.

1. Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional doping

2. Structure of (√3×√3) R 30°‐B at the Si interface studied by grazing incidence x‐ray diffraction

3. Atomic structure of Si(111) (√3¯×√3¯)R30°-B by dynamical low-energy electron diffraction

4. Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction

5. Ab initio cluster calculations of the chemisorption of hydrogen on the Si(111)√3 × √3R30°-B surface

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3. Superconductivity in a two monolayer thick indium film on Si(111) 3×3 -B;Physical Review B;2022-07-28

4. Electronic structure of the Si(111)3×3R30∘−B surface from theory and photoemission spectroscopy;Physical Review B;2021-01-13

5. Local geometry around B atoms in B/Si(1 1 1) from polarized x-ray absorption spectroscopy;Journal of Physics: Condensed Matter;2019-10-24

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