Effect of hydrostatic pressure on the dc characteristics of AlGaN∕GaN heterojunction field effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2161812
Reference15 articles.
1. Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs
2. Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
3. Gateless AlGaN/GaN HEMT response to block co-polymers
4. Group III-nitride-based gas sensors for combustion monitoring
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