Mechanical-electrical synergy damage effect on GaN HEMT under high-power microwave-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Mechanical-electrical synergy damage effect on GaN HEMT under high-power microwave

Published:2023-07-07 Issue:8 Volume:66 Page:2373-2380
ISSN:1674-7321
Container-title:Science China Technological Sciences
language:en
Short-container-title:Sci. China Technol. Sci.

Author:

Wang Lei,Chai ChangChun,Zhao TianLong,Li FuXing,Qin YingShuo,Yang YinTang

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s11431-023-2407-3.pdf

Reference38 articles.

1. Chung J W, Hoke W E, Chumbes E M, et al. AlGaN/GaN HEMT with 300-GHz fmax. IEEE Electron Device Lett, 2010, 31: 195–197

2. Du J J, Xu S R, Peng R S, et al. Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids. Sci China Tech Sci, 2021, 64: 1583–1588

3. Chen D, Yuan P, Zhao S, et al. Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate. Sci China Mater, 2022, 65: 795–802

4. Wu Y F, Kapolnek D, Ibbetson J P, et al. Very-high power density AlGaN/GaN HEMTs. IEEE Trans Electron Devices, 2001, 48: 586–590

5. Asif Khan M, Kuznia J N, Olson D T, et al. Microwave performance of a 0.25 µm gate AlGaN/GaN heterostructure field effect transistor. Appl Phys Lett, 1994, 65: 1121–1123

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology;Heat Transfer;2024-05-27

2. Failure Analysis of PLCs Under High Power Electromagnetic Pulses;IEEE Transactions on Electromagnetic Compatibility;2024

3. Amplitude-Frequency Decoupled Heater and Integrated Strategies for Automotive Batteries Based on Inverter and Motor;IEEE Transactions on Power Electronics;2023

4. Electromagnetic Pulse Induced Failure Analysis of GaN HEMT Based Power Amplifier;IEEE Transactions on Power Electronics;2023

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3