Gateless AlGaN/GaN HEMT response to block co-polymers-Reference-Cited by-同舟云学术

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Gateless AlGaN/GaN HEMT response to block co-polymers

Published:2004-05 Issue:5 Volume:48 Page:851-854
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kang B.S.,Louche G.,Duran R.S.,Gnanou Y.,Pearton S.J.,Ren F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. High-Electron-Mobility AlGaN/GaN Transistors (HEMTs) for Fluid Monitoring Applications

2. Group-III-Nitride Based Gas Sensing Devices

3. pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

4. Wetting Behaviour of GaN Surfaces with Ga- or N-Face Polarity

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1. Development of semiconductor based heavy metal ion sensors for water analysis: A review;Sensors and Actuators A: Physical;2021-10

2. Fabrication and Modeling-Based Performance Analysis of Circular GaN MOSHEMT-Based Electrochemical Sensors;IEEE Sensors Journal;2021-02-15

3. Photoexcited-induced sensitivity of InGaAs surface QDs to environment;Nanotechnology;2014-10-17

4. Temperature dependence of sensing characteristics of a pH sensor fabricated on AlGaN/GaN heterostructure;Japanese Journal of Applied Physics;2014-09-17

5. Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots;ACS Applied Materials & Interfaces;2014-04-28

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