Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2148620
Reference22 articles.
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4. Towards high performance GaInAsN∕GaAsN laser diodes in 1.5 μm range
5. High T/sub 0/ long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source
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1. Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures;Journal of Crystal Growth;2022-03
2. A variationally computed room temperature line list for AsH3;Physical Chemistry Chemical Physics;2019
3. Band structure of strain-balanced GaAsBi/GaAsN superlattices on GaAs;Physical Review B;2011-05-31
4. Growth of strained GaAs1−ySby and GaAs1−y−zSbyNz quantum wells on InP substrates;Journal of Crystal Growth;2008-04
5. MOCVD-Grown Dilute Nitride Type II Quantum Wells;IEEE Journal of Selected Topics in Quantum Electronics;2008
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