Band structure of strain-balanced GaAsBi/GaAsN superlattices on GaAs
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.83.195327/fulltext
Reference30 articles.
1. Bowing parameter of the band-gap energy of GaNxAs1−x
2. Alloy scattering ofn-type carriers inGaNxAs1−x
3. Growth and properties of the dilute bismide semiconductor GaAs1−xBix a complementary alloy to the dilute nitrides
4. Band parameters for III–V compound semiconductors and their alloys
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