MOCVD-Grown Dilute Nitride Type II Quantum Wells-Reference-Cited by-同舟云学术

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MOCVD-Grown Dilute Nitride Type II Quantum Wells

Published:2008 Issue:4 Volume:14 Page:979-991
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Mawst L. J.,Huang Juno Yu-Ting,Xu D. P.,Yeh Jeng-Ya,Tsvid Gene,Kuech Thomas F.,Tansu Nelson

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/4582356/04582378.pdf?arnumber=4582378

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The optical gain of dilute bismuth GaAs nanowires under the joint uniaxial stresses;Physics Letters A;2023-08

2. Epitaxial Growth of Semiconductor Quantum Dots: An Overview;Journal of Molecular and Engineering Materials;2023-06-30

3. Room temperature laser emission of (Ga,In)(N,As)/Ga(As,Sb)/(Ga,In)(N,As) type‐II ‘W’ quantum well heterostructures;Electronics Letters;2022-01-26

4. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01

5. Electronic structures and optical gain of dilute nitride GaAs nanowires;Applied Physics Express;2018-08-20

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