Spectroscopic ellipsometry studies of very thin thermally grown SiO2films: Influence of oxidation procedure on oxide quality and stress
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359876
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1. Optical models for ultrathin oxides on Si- and C-terminated faces of thermally oxidized SiC;Journal of Applied Physics;2009-12-15
2. Analysis of Organic Films and Interfacial Layers by Infrared Spectroscopic Ellipsometry;Applied Spectroscopy;2005-11
3. Infrared ellipsometric study on the initial stages of oxide growth on Si(001);Journal of Physics: Condensed Matter;2004-09-21
4. Monolayer-Controlled Deposition of Silicon Oxide Films on Gold, Silicon, and Mica Substrates by Room-Temperature Adsorption and Oxidation of Alkylsiloxane Monolayers;The Journal of Physical Chemistry B;2000-05-13
5. Surface contributions to the effective optical properties of porous silicon;Solar Energy Materials and Solar Cells;1998-04-30
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