Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 101¯1) semipolar GaN template-Reference-Cited by-同舟云学术

Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 101¯1) semipolar GaN template

Published:2017-01-09 Issue:2 Volume:110 Page:022105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Yueliang¹,Qi Haoyuan¹,Meisch Tobias²,Hocker Matthias³,Thonke Klaus³^ORCID,Scholz Ferdinand²^ORCID,Kaiser Ute¹

Affiliation:

1. Central Facility of Electron Microscopy, Electron Microscopy Group of Materials Science, Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany

2. Institute of Optoelectronics, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany

3. Institute of Quantum Matter, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4974050

Reference20 articles.

1. Semipolar GaN grown on foreign substrates: a review

2. Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

3. Spontaneous polarization and piezoelectric constants of III-V nitrides

4. Growth and applications of Group III-nitrides

5. Effects of quantum confined stark effect and well thickness on optical properties of double quantum wells violet InGaN laser diodes

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3. Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes;Scientific Reports;2019-07-05

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