Effect of GaAsyP1−y(0⩽y<1) interlayers on the structural, optical, and electrical characteristics of GaAs/InGaP heterojunction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126352
Reference11 articles.
1. Growth temperature dependent band alignment at the Ga0.51In0.49P to GaAs heterointerfaces
2. LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires
3. Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy
4. Deep emission band at GaInP/GaAs interface
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1. Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods;Nanoscale Research Letters;2011-03-03
2. Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP∕GaAs: A Study by the Chemically Sensitive (200) Diffraction;Journal of The Electrochemical Society;2009
3. Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method;Journal of Materials Science: Materials in Electronics;2008-01-23
4. Combined (200) DF-TEM and X-ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions;physica status solidi (c);2007-04
5. Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/AlGaAs Quantum-Well Laser;Chinese Physics Letters;2006-09
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